We have been developing the X-ray silicon-on-insulator (SOI) pixel sensor called XRPIX for future astrophysical satellites. XRPIX is a monolithic active pixel sensor consisting of a high-resistivity Si sensor, thin SiO$_2$ insulator, and CMOS pixel circuits that utilize SOI technology. Since XRPIX is capable of event-driven readouts, it can achieve high timing resolution greater than $\sim 10{\rm ~\mu s}$, which enables low background observation by adopting the anti-coincidence technique. One of the major issues in the development of XRPIX is the electrical interference between the sensor layer and circuit layer, which causes nonuniform detection efficiency at the pixel boundaries. In order to reduce the interference, we introduce a Double-SOI (D-SOI) structure, in which a thin Si layer (middle Si) is added to the insulator layer of the SOI structure. In this structure, the middle Si layer works as an electrical shield to decouple the sensor layer and circuit layer. We measured the detector response of the XRPIX with D-SOI structure at KEK. We irradiated the X-ray beam collimated with $4{\rm ~\mu m\phi}$ pinhole, and scanned the device with $6{\rm ~\mu m}$ pitch, which is 1/6 of the pixel size. In this paper, we present the improvement in the uniformity of the detection efficiency in D-SOI sensors, and discuss the detailed X-ray response and its physical origins.

We report on a measurement of the size of charge clouds produced by X-ray photons in X-ray SOI (Silicon-On-Insulator) pixel sensor named XRPIX. We carry out a beam scanning experiment of XRPIX using a monochromatic X-ray beam at 5.0 keV collimated to $\sim 10$ $\mu$m with a 4-$\mu$m$\phi$ pinhole, and obtain the spatial distribution of single-pixel events at a sub-pixel scale. The standard deviation of charge clouds of 5.0 keV X-ray is estimated to be $\sigma_{\rm cloud} = 4.30 \pm 0.07$ $\mu$m. Compared to the detector response simulation, the estimated charge cloud size is well explained by a combination of photoelectron range, thermal diffusion, and Coulomb repulsion. Moreover, by analyzing the fraction of multi-pixel events in various energies, we find that the energy dependence of the charge cloud size is also consistent with the simulation.

We have been developing event-driven SOI Pixel Detectors, named `XRPIX' (X-Ray soiPIXel) based on the silicon-on-insulator (SOI) pixel technology, for the future X-ray astronomical satellite with wide band coverage from 0.5 keV to 40 keV. XRPIX has event trigger output function at each pixel to acquire a good time resolution of a few $\mu \rm s$ and has Correlated Double Sampling function to reduce electric noises. The good time resolution enables the XRPIX to reduce Non X-ray Background in the high energy band above 10\,keV drastically by using anti-coincidence technique with active shield counters surrounding XRPIX. In order to increase the soft X-ray sensitivity, it is necessary to make the dead layer on the X-ray incident surface as thin as possible. Since XRPIX1b, which is a device at the initial stage of development, is a front-illuminated (FI) type of XRPIX, low energy X-ray photons are absorbed in the 8 $\rm \mu$m thick circuit layer, lowering the sensitivity in the soft X-ray band. Therefore, we developed a back-illuminated (BI) device XRPIX2b, and confirmed high detection efficiency down to 2.6 keV, below which the efficiency is affected by the readout noise. In order to further improve the detection efficiency in the soft X-ray band, we developed a back-illuminated device XRPIX3b with lower readout noise. In this work, we irradiated 2--5 keV X-ray beam collimated to 4 $\rm \mu m \phi$ to the sensor layer side of the XRPIX3b at 6 $\rm \mu m$ pitch. In this paper, we reported the uniformity of the relative detection efficiency, gain and energy resolution in the subpixel level for the first time. We also confirmed that the variation in the relative detection efficiency at the subpixel level reported by Matsumura et al. has improved.