We have been developing the X-ray silicon-on-insulator (SOI) pixel sensor called XRPIX for future astrophysical satellites. XRPIX is a monolithic active pixel sensor consisting of a high-resistivity Si sensor, thin SiO$_2$ insulator, and CMOS pixel circuits that utilize SOI technology. Since XRPIX is capable of event-driven readouts, it can achieve high timing resolution greater than $\sim 10{\rm ~\mu s}$, which enables low background observation by adopting the anti-coincidence technique. One of the major issues in the development of XRPIX is the electrical interference between the sensor layer and circuit layer, which causes nonuniform detection efficiency at the pixel boundaries. In order to reduce the interference, we introduce a Double-SOI (D-SOI) structure, in which a thin Si layer (middle Si) is added to the insulator layer of the SOI structure. In this structure, the middle Si layer works as an electrical shield to decouple the sensor layer and circuit layer. We measured the detector response of the XRPIX with D-SOI structure at KEK. We irradiated the X-ray beam collimated with $4{\rm ~\mu m\phi}$ pinhole, and scanned the device with $6{\rm ~\mu m}$ pitch, which is 1/6 of the pixel size. In this paper, we present the improvement in the uniformity of the detection efficiency in D-SOI sensors, and discuss the detailed X-ray response and its physical origins.

We report on a measurement of the size of charge clouds produced by X-ray photons in X-ray SOI (Silicon-On-Insulator) pixel sensor named XRPIX. We carry out a beam scanning experiment of XRPIX using a monochromatic X-ray beam at 5.0 keV collimated to $\sim 10$ $\mu$m with a 4-$\mu$m$\phi$ pinhole, and obtain the spatial distribution of single-pixel events at a sub-pixel scale. The standard deviation of charge clouds of 5.0 keV X-ray is estimated to be $\sigma_{\rm cloud} = 4.30 \pm 0.07$ $\mu$m. Compared to the detector response simulation, the estimated charge cloud size is well explained by a combination of photoelectron range, thermal diffusion, and Coulomb repulsion. Moreover, by analyzing the fraction of multi-pixel events in various energies, we find that the energy dependence of the charge cloud size is also consistent with the simulation.

We have been developing a monolithic active pixel sensor, ``XRPIX``, for the Japan led future X-ray astronomy mission ``FORCE`` observing the X-ray sky in the energy band of 1-80 keV with angular resolution of better than 15``. XRPIX is an upper part of a stack of two sensors of an imager system onboard FORCE, and covers the X-ray energy band lower than 20 keV. The XRPIX device consists of a fully depleted high-resistivity silicon sensor layer for X-ray detection, a low resistivity silicon layer for CMOS readout circuit, and a buried oxide layer in between, which is fabricated with 0.2 $\mu$ m CMOS silicon-on-insulator (SOI) technology. Each pixel has a trigger circuit with which we can achieve a 10 $\mu$ s time resolution, a few orders of magnitude higher than that with X-ray astronomy CCDs. We recently introduced a new type of a device structure, a pinned depleted diode (PDD), in the XRPIX device, and succeeded in improving the spectral performance, especially in a readout mode using the trigger function. In this paper, we apply a mesh experiment to the XRPIX devices for the first time in order to study the spectral response of the PDD device at the subpixel resolution. We confirmed that the PDD structure solves the significant degradation of the charge collection efficiency at the pixel boundaries and in the region under the pixel circuits, which is found in the single SOI structure, the conventional type of the device structure. On the other hand, the spectral line profiles are skewed with low energy tails and the line peaks slightly shift near the pixel boundaries, which contribute to a degradation of the energy resolution.

We have been developing monolithic active pixel sensors for X-rays based on the silicon-on-insulator technology. Our device consists of a low-resistivity Si layer for readout CMOS electronics, a high-resistivity Si sensor layer, and a SiO$_2$ layer between them. This configuration allows us both high-speed readout circuits and a thick (on the order of $100~\mu{\rm m}$) depletion layer in a monolithic device. Each pixel circuit contains a trigger output function, with which we can achieve a time resolution of $\lesssim 10~\mu{\rm s}$. One of our key development items is improvement of the energy resolution. We recently fabricated a device named XRPIX6E, to which we introduced a pinned depleted diode (PDD) structure. The structure reduces the capacitance coupling between the sensing area in the sensor layer and the pixel circuit, which degrades the spectral performance. With XRPIX6E, we achieve an energy resolution of $\sim 150$~eV in full width at half maximum for 6.4-keV X-rays. In addition to the good energy resolution, a large imaging area is required for practical use. We developed and tested XRPIX5b, which has an imaging area size of $21.9~{\rm mm} \times 13.8~{\rm mm}$ and is the largest device that we ever fabricated. We successfully obtain X-ray data from almost all the $608 \times 384$ pixels with high uniformity.