Photoluminescence spectra show that silicon impurity is present in lattice of some nanodiamond grains (ND) of various chondrites as a silicon-vacancy (SiV) defect. The relative intensity of the SiV band in the diamond-rich separates depends on chemical composition of meteorites and on size of ND grains. The strongest signal is found for the size separates enriched in small grains; thus confirming our earlier conclusion that the SiV defects preferentially reside in the smallest (less than 2 nm) grains. The difference in relative intensities of the SiV luminescence in the diamond-rich separates of individual meteorites are due to variable conditions of thermal metamorphism of their parent bodies and/or uneven sampling of nanodiamonds populations. Annealing of separates in air eliminates surface sp2-carbon, consequently, the SiV luminescence is enhanced. Strong and well-defined luminescence and absorption of the SiV defect is a promising feature to locate cold (< 250 {\deg}C) nanodiamonds in space.

The results of spectroscopic and structural studies of phase composition and of defects in nanodiamonds from Efremovka (CV3) and Orgueil (CI) chondrites indicate that nitrogen atomic environment in meteoritic nanodiamonds (MND) is similar to that observed in synthetic counterparts produced by detonation and by the Chemical Vapour Deposition (CVD)-process. Most of the nitrogen in MND appears to be confined to lattice imperfections, such as crystallite/twin boundaries and other extended defects, while the concentration of nitrogen in the MND lattice is low. It is suggested that the N-rich sub-population of MND grains may have been formed with high growth rates in environments rich in accessible N (i.e., N in atomic form or as weakly bonded compounds). For the first time the silicon-vacancy complex (the "silicon" defect) is observed in MND by photoluminescence spectroscopy.