We describe a novel GaAs/AlGaAs double-quantum-well device for the infrared photon detection, called Charge-Sensitive Infrared Phototransistor (CSIP). The principle of CSIP detector is the photo-excitation of an intersubband transition in a QW as an charge integrating gate and the signal amplification by another QW as a channel with very high gain, which provides us with extremely high responsivity (10^4 -- 10^6 A/W). It has been demonstrated that the CSIP designed for the mid-infrared wavelength (14.7 um) has an excellent sensitivity; the noise equivalent power (NEP) of 7x10^-19 W/rHz with the quantum efficiency of ~2%. Advantages of the CSIP against the other highly sensitive detectors are, huge dynamic range of >10^6, low output impedance of 10^3 -- 10^4 Ohms, and relatively high operation temperature (>2K). We discuss possible applications of the CSIP to FIR photon detection covering 35 -- 60 um waveband, which is a gap uncovered with presently available photoconductors.

We describe the current status and the prospect for the development of monolithic Ge:Ga array detector for SAFARI. Our goal is to develop a 64x64 array for the 45 -- 110 um band, on the basis of existing technologies to make 3x20 monolithic arrays for the AKARI satellite. For the AKARI detector we have achieved a responsivity of 10 A/W and a read-out noise limited NEP (noise equivalent power) of 10^-17 W/rHz. We plan to develop the detector for SAFARI with technical improvements; significantly reduced read-out noise with newly developed cold read-out electronics, mitigated spectral fringes as well as optical cross-talks with a multi-layer antireflection coat. Since most of the elemental technologies to fabricate the detector are flight-proven, high technical readiness levels (TRLs) should be achieved for fabricating the detector with the above mentioned technical demonstrations. We demonstrate some of these elemental technologies showing results of measurements for test coatings and prototype arrays.