The Hard X-ray Detector (HXD) on board Suzaku covers a wide energy range from 10 keV to 600 keV by combination of silicon PIN diodes and GSO scintillators. The HXD is designed to achieve an extremely low in-orbit back ground based on a combination of new techniques, including the concept of well-type active shield counter. With an effective area of 142 cm^2 at 20 keV and 273 cm2 at 150 keV, the background level at the sea level reached ~1x10^{-5} cts s^{-1} cm^{-2} keV^{-1} at 30 keV for the PI N diodes, and ~2x10^{-5} cts s^{-1} cm^{-2} keV^{-1} at 100 keV, and ~7x10^{-6} cts s^{-1} cm^{-2} keV^{-1} at 200 keV for the phoswich counter. Tight active shielding of the HXD results in a large array of guard counters surrounding the main detector parts. These anti-coincidence counters, made of ~4 cm thick BGO crystals, have a large effective area for sub-MeV to MeV gamma-rays. They work as an excellent gamma-ray burst monitor with limited angular resolution (~5 degree). The on-board signal-processing system and the data transmitted to the ground are also described.

We have been developing a semiconductor Compton telescope to explore the universe in the energy band from several tens of keV to a few MeV. We use a Si strip and CdTe pixel detector for the Compton telescope to cover an energy range from 60 keV. For energies above several hundred keV, the higher efficiency of CdTe semiconductor in comparison with Si is expected to play an important role as an absorber and a scatterer. In order to demonstrate the spectral and imaging capability of a CdTe-based Compton Telescope, we have developed a Compton telescope consisting of a stack of CdTe pixel detectors as a small scale prototype. With this prototype, we succeeded in reconstructing images and spectra by solving the Compton equation from 122 keV to 662 keV. The energy resolution (FWHM) of reconstructed spectra is 7.3 keV at 511 keV and 3.1 keV at 122 keV, respectively. The angular resolution obtained at 511 keV is measured to be 12.2 degree (FWHM).

We are developing a Compton telescope based on high resolution Si and CdTe imaging devices in order to obtain a high sensitivity astrophysical observation in sub-MeV gamma-ray region. In this paper, recent results from the prototype Si/CdTe semiconductor Compton telescope are reported. The Compton telescope consists of a double-sided Si strip detector (DSSD) and CdTe pixel detectors, combined with low noise analog LSI, VA32TA. With this detector, we obtained Compton reconstructed images and spectra from line gamma-rays ranging from 81 keV up to 356 keV. The energy resolution is 3.8 keV and 7.9 keV at 122 keV and 356 keV, respectively, and the angular resolution is 9.9 degrees and 5.7 degrees at 122 keV and 356 keV, respectively.

We have developed a large CdTe pixel detector with dimensions of 23.7 x 13.0 mm and a pixel size of 448 x 448 um^2. The detector is based on recent technologies of an uniform CdTe single crystal, a two-dimensional ASIC, and stud bump-bonding to connect pixel electrodes on the CdTe surface to the ASIC. Good spectra are obtained from 1051 pixels out of total 1056 pixels. When we operate the detector at -50 C, the energy resolution is 0.67 keV and 0.99 keV at 14 keV and 60 keV, respectively. Week-long stability of the detector is confirmed at operating temperatures of both -50 C and -20 C. The detector also shows high uniformity: the peak positions for all pixels agree to within 0.82%, and the average of the energy resolution is 1.04 keV at a temperature of -50 C. When we normalized the peak area by the total counts detected by each pixel, a variation of 2.1 % is obtained.