We study X-ray spectra of four Narrow Line Seyfert 1 galaxies (NLS1s), Mrk 110, SWIFT J2127.4+5654, IGR J16185-5928, and WKK 4438, using Suzaku and NuSTAR data. The spectra of the four sources are reproduced with a model consisting of a cutoff power law component, a reflection component, and a soft excess component. The photon indices of all the sources are found to be ~ 2. The cutoff energies are constrained to be ~ 40 keV for Mrk 110, SWIFT J2127.4+5654, and WKK 4438, whereas a lower limit of 155 keV is obtained for IGR J16185-5928. We find that the NLS1s in our sample have systematically softer spectra and lower cutoff energies than Broad Line Seyfert 1 galaxies reported in the literature. We also perform spectral fittings with a model in which the cutoff power law is replaced with the thermal Comptonization model in order to directly obtain the electron temperature of the corona (kTe). The fits give kTe ~ 10-20 keV for Mrk 110 and SWIFT J2127.4+5654, and lower limits of kTe > 18 keV for IGR J16185-5928 and kTe > 5 keV for WKK 4438. We divide the NuSTAR data of SWIFT J2127.4+5654 into three periods according to the flux. The spectral fits in the three periods hint that kTe is the lower in the higher flux period. The results of the four sources suggest a possible anti-correlation between kTe and the ratio of the luminosity of Compton up-scattered photons to the Eddington luminosity. The anti-correlation can be explained by a simple model in which electrons in the corona are cooled and heated through inverse Compton scattering and Coulomb collisions with protons, respectively.

We have been developing X-ray SOI pixel Sensors, called "XRPIX", for future X-ray astronomy satellites that enable us to observe in the wide energy band of 0.5-40 keV. Since XRPIXs have the circuitry layer with a thickness of about 8 {\mu}m in the front side of the sensor, it is impossible to detect low energy X-rays with a front-illuminated type. So, we have been developing back-illuminated type of XRPIX with a less 1 {\mu}m dead layer in the back-side, which enables the sensitivity to reach 0.5 keV. We produced two types of back-side illuminated (BI) XRPIXs, one of which is produced in "Pizza process" which LBNL developed and the other is processed in the ion implantation and laser annealing. We irradiated both of the BI-XRPIXs with soft X-ray and investigate soft X-ray performance of them. We report results from soft X-ray evaluation test of the device.