Compton telescopes based on semiconductor technologies are being developed to explore the gamma-ray universe in an energy band 0.1--20 MeV, which is not well covered by the present or near-future gamma-ray telescopes. The key feature of such Compton telescopes is the high energy resolution that is crucial for high angular resolution and high background rejection capability. The energy resolution around 1 keV is required to approach physical limit of the angular resolution due to Doppler broadening. We have developed a low noise front-end ASIC (Application-Specific Integrated Circuit), VA32TA, to realize this goal for the readout of Double-sided Silicon Strip Detector (DSSD) and Cadmium Telluride (CdTe) pixel detector which are essential elements of the semiconductor Compton telescope. We report on the design and test results of the VA32TA. We have reached an energy resolution of 1.3 keV (FWHM) for 60 keV and 122 keV at 0 degree C with a DSSD and 1.7 keV (FWHM) with a CdTe detector.

A Semiconductor Multiple-Compton Telescope (SMCT) is being developed to explore the gamma-ray universe in an energy band 0.1--20 MeV, which is not well covered by the present or near-future gamma-ray telescopes. The key feature of the SMCT is the high energy resolution that is crucial for high angular resolution and high background rejection capability. We have developed prototype modules for a low noise Double-sided Silicon Strip Detector (DSSD) system which is an essential element of the SMCT. The geometry of the DSSD is optimized to achieve the lowest noise possible. A new front-end VLSI device optimized for low noise operation is also developed. We report on the design and test results of the prototype system. We have reached an energy resolution of 1.3 keV (FWHM) for 60 keV and 122 keV at 0 degree C.