A Compton camera is the most promising approach for gamma-ray detection in the energy region from several hundred keV to MeV, especially for application in high energy astrophysics. In order to obtain good angular resolution, semiconductor detectors such as silicon, germanium and cadmium telluride(CdTe) have several advantages over scintillation detectors, which have been used so far. Based on the recent advances of high resolution CdTe and silicon imaging detectors, we are working on a Si/CdTe Compton camera. We have developed 64-pixel CdTe detectors with a pixel size of 2mmx2mm and double-sided Si strip detectors(DSSDs) with a position resolution of 800 micron. As a prototype Si/CdTe Compton camera, we use a DSSD as a scatterer and two CdTe pixel detectors as an absorber. In order to verify its performance, we irradiate the camera with 100% linearly polarised 170keV gamma-rays and demonstrate the system works properly as a Compton camera. The resolution of the reconstructed scattering angle is 22 degrees(FWHM). Measurement of polarization is also reported. The polarimetric modulation factor is obtained to be 43%, which is consistent with the prediction of Monte Carlo simulations.

We are developing a Compton telescope based on high resolution Si and CdTe imaging devices in order to obtain a high sensitivity astrophysical observation in sub-MeV gamma-ray region. In this paper, recent results from the prototype Si/CdTe semiconductor Compton telescope are reported. The Compton telescope consists of a double-sided Si strip detector (DSSD) and CdTe pixel detectors, combined with low noise analog LSI, VA32TA. With this detector, we obtained Compton reconstructed images and spectra from line gamma-rays ranging from 81 keV up to 356 keV. The energy resolution is 3.8 keV and 7.9 keV at 122 keV and 356 keV, respectively, and the angular resolution is 9.9 degrees and 5.7 degrees at 122 keV and 356 keV, respectively.

Compton telescope is a promising technology to achieve very high sensitivity in the soft gamma-ray band (0.1-10 MeV) by utilizing Compton kinematics. Compton kinematics also enables polarization measurement which will open new windows to study gamma-ray production mechanism in the universe. CdTe and Si semiconductor technologies are key technologies to realize the Compton telescope in which their high energy resolution is crucial for high angular resolution and background rejection capability. We have assembled a prototype module using a double-sided silicon strip detector and CdTe pixel detectors. In this paper, we present expected polarization performance of a proposed mission (NeXT/SGD). We also report results from polarization measurements using polarized synchrotron light and validation of EGS4 MC simulation.