We propose an all-silicon multi-layer interference filter composed solely of silicon with sub-wavelength structure (SWS) in order to realize high performance optical filters operating in the THz frequency region with robustness against cryogenic thermal cycling and mechanical damage. We demonstrate fabrication of a three-layer prototype using well-established common micro-electro-mechanical systems (MEMS) technologies as a first step toward developing practical filters. The measured transmittance of the three-layer filter agrees well with the theoretical transmittances calculated by a simple thin-film calculation with effective refractive indices as well as a rigorous coupled-wave analysis simulation. We experimentally show that SWS layers can work as homogeneous thin-film interference layers with effective refractive indices even if there are multiple SWS layers in a filter.

We have evaluated the optical and electrical properties of a far-infrared (IR) transparent electrode for extrinsic germanium (Ge) photoconductors at 4 K, which was fabricated by molecular beam epitaxy (MBE). As a far-IR transparent electrode, an aluminum (Al)-doped Ge layer is formed at well-optimized doping concentration and layer thickness in terms of the three requirements: high far-IR transmittance, low resistivity, and excellent ohmic contact. The Al-doped Ge layer has the far-IR transmittance of >95 % within the wavelength range of 40--200 microns, while low resistivity (~5 ohm-cm) and ohmic contact are ensured at 4 K. We demonstrate the applicability of the MBE technology in fabricating the far-IR transparent electrode satisfying the above requirements.