Jung-Kubiak, C.
Normalized to: Jung-Kubiak, C.
3 article(s) in total. 13 co-authors, from 1 to 3 common article(s). Median position in authors list is 2,0.
[1]
oai:arXiv.org:1911.09632 [pdf] - 2002001
Flat low-loss silicon gradient index lens for millimeter and
submillimeter wavelengths
Submitted: 2019-11-21
We present the design, simulation, and planned fabrication process of a flat
high resistivity silicon gradient index (GRIN) lens for millimeter and
submillimeter wavelengths with very low absorption losses. The gradient index
is created by subwavelength holes whose size increases with the radius of the
lens. The effective refractive index created by the subwavelength holes is
constant over a very wide bandwidth, allowing the fabrication of achromatic
lenses up to submillimeter wavelengths. The designed GRIN lens was successfully
simulated and shows an expected efficiency better than that of a classic
silicon plano-concave spherical lens with approximately the same thickness and
focal length. Deep reactive ion etching (DRIE) and wafer-bonding of several
patterned wafers will be used to realize our first GRIN lens prototype.
[2]
oai:arXiv.org:1802.04854 [pdf] - 1701561
Stacked Wafer Gradient Index Silicon Optics with Integral
Anti-reflection Layers
Defrance, F.;
Chattopadhyay, G.;
Connors, J.;
Golwala, S.;
Hollister, M. I.;
Jung-Kubiak, C.;
Padilla, E.;
Radford, S.;
Sayers, J.;
Tong, E. C.;
Yoshida, H.
Submitted: 2018-02-13, last modified: 2018-06-18
Silicon optics with wide bandwidth anti-reflection (AR) coatings, made of
multi-layer textured silicon surfaces, are developed for millimeter and
submillimeter wavelengths. Single and double layer AR coatings were designed
for an optimal transmission centered on 250 GHz, and fabricated using the DRIE
(Deep Reaction Ion Etching) technique. Tests of high resistivity silicon wafers
with single-layer coatings between 75 GHz and 330 GHz are presented and
compared with the simulations.
[3]
oai:arXiv.org:1803.05168 [pdf] - 1700956
A 1.6:1 Bandwidth Two-Layer Antireflection Structure for Silicon Matched
to the 190-310 GHz Atmospheric Window
Defrance, Fabien;
Jung-Kubiak, Cecile;
Sayers, Jack;
Connors, Jake;
deYoung, Clare;
Hollister, Matthew I.;
Yoshida, Hiroshige;
Chattopadhyay, Goutam;
Golwala, Sunil R.;
Radford, Simon J. E.
Submitted: 2018-03-14, last modified: 2018-05-28
Although high-resistivity, low-loss silicon is an excellent material for THz
transmission optics, its high refractive index necessitates antireflection
treatment. We fabricated a wide-bandwidth, two-layer antireflection treatment
by cutting subwavelength structures into the silicon surface using multi-depth
deep reactive ion etching (DRIE). A wafer with this treatment on both sides has
<-20 dB (<1%) reflectance over 190-310 GHz. We also demonstrated that bonding
wafers introduces no reflection features above the -20 dB level, reproducing
previous work. Together these developments immediately enable construction of
wide-bandwidth silicon vacuum windows and represent two important steps toward
gradient-index silicon optics with integral broadband antireflection treatment.