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Jung-Kubiak, C.

Normalized to: Jung-Kubiak, C.

3 article(s) in total. 13 co-authors, from 1 to 3 common article(s). Median position in authors list is 2,0.

[1]  oai:arXiv.org:1911.09632  [pdf] - 2002001
Flat low-loss silicon gradient index lens for millimeter and submillimeter wavelengths
Comments: J Low Temp Phys (2019)
Submitted: 2019-11-21
We present the design, simulation, and planned fabrication process of a flat high resistivity silicon gradient index (GRIN) lens for millimeter and submillimeter wavelengths with very low absorption losses. The gradient index is created by subwavelength holes whose size increases with the radius of the lens. The effective refractive index created by the subwavelength holes is constant over a very wide bandwidth, allowing the fabrication of achromatic lenses up to submillimeter wavelengths. The designed GRIN lens was successfully simulated and shows an expected efficiency better than that of a classic silicon plano-concave spherical lens with approximately the same thickness and focal length. Deep reactive ion etching (DRIE) and wafer-bonding of several patterned wafers will be used to realize our first GRIN lens prototype.
[2]  oai:arXiv.org:1802.04854  [pdf] - 1701561
Stacked Wafer Gradient Index Silicon Optics with Integral Anti-reflection Layers
Comments: A more detailed article has been written and is now available in arXiv (arXiv:1803.05168) and published in Applied Optics (doi: 10.1364/AO.57.005196)
Submitted: 2018-02-13, last modified: 2018-06-18
Silicon optics with wide bandwidth anti-reflection (AR) coatings, made of multi-layer textured silicon surfaces, are developed for millimeter and submillimeter wavelengths. Single and double layer AR coatings were designed for an optimal transmission centered on 250 GHz, and fabricated using the DRIE (Deep Reaction Ion Etching) technique. Tests of high resistivity silicon wafers with single-layer coatings between 75 GHz and 330 GHz are presented and compared with the simulations.
[3]  oai:arXiv.org:1803.05168  [pdf] - 1700956
A 1.6:1 Bandwidth Two-Layer Antireflection Structure for Silicon Matched to the 190-310 GHz Atmospheric Window
Comments: Accepted for publication in Applied Optics
Submitted: 2018-03-14, last modified: 2018-05-28
Although high-resistivity, low-loss silicon is an excellent material for THz transmission optics, its high refractive index necessitates antireflection treatment. We fabricated a wide-bandwidth, two-layer antireflection treatment by cutting subwavelength structures into the silicon surface using multi-depth deep reactive ion etching (DRIE). A wafer with this treatment on both sides has <-20 dB (<1%) reflectance over 190-310 GHz. We also demonstrated that bonding wafers introduces no reflection features above the -20 dB level, reproducing previous work. Together these developments immediately enable construction of wide-bandwidth silicon vacuum windows and represent two important steps toward gradient-index silicon optics with integral broadband antireflection treatment.