Normalized to: Jaroshevich, A.
[1]
oai:arXiv.org:0709.1363 [pdf] - 4758
Electron-ion recombination of Si IV forming Si III: Storage-ring
measurement and multiconfiguration Dirac-Fock calculations
Schmidt, E. W.;
Bernhardt, D.;
Mueller, A.;
Schippers, S.;
Fritzsche, S.;
Hoffmann, J.;
Jaroshevich, A. S.;
Krantz, C.;
Lestinsky, M.;
Orlov, D. A.;
Wolf, A.;
Lukic, D.;
Savin, D. W.
Submitted: 2007-09-10
The electron-ion recombination rate coefficient for Si IV forming Si III was
measured at the heavy-ion storage-ring TSR. The experimental electron-ion
collision energy range of 0-186 eV encompassed the 2p(6) nl n'l' dielectronic
recombination (DR) resonances associated with 3s to nl core excitations, 2s
2p(6) 3s nl n'l' resonances associated with 2s to nl (n=3,4) core excitations,
and 2p(5) 3s nl n'l' resonances associated with 2p to nl (n=3,...,infinity)
core excitations. The experimental DR results are compared with theoretical
calculations using the multiconfiguration Dirac-Fock (MCDF) method for DR via
the 3s to 3p n'l' and 3s to 3d n'l' (both n'=3,...,6) and 2p(5) 3s 3l n'l'
(n'=3,4) capture channels. Finally, the experimental and theoretical plasma DR
rate coefficients for Si IV forming Si III are derived and compared with
previously available results.
