We have analyzed various characteristic temperatures and energies of hole-doped high-Tc cuprates as a function of a dimensionless hole-doping concentration (pu). Entirely based on the experimental grounds we construct a unified electronic phase diagram (UEPD), where three characteristic temperatures (T*'s) and their corresponding energies (E*'s) converge as pu increases in the underdoped regime. T*'s and E*'s merge together with the Tc curve and 3.5kBTc curve at pu - 1.1 in the overdoped regime, respectively. They finally go to zero at pu - 1.3. The UEPD follows an asymmetric half-dome-shaped Tc curve in which Tc appears at pu - 0.4, reaches a maximum at pu - 1, and rapidly goes to zero at pu - 1.3. The asymmetric half-dome-shaped Tc curve is at odds with the well-known symmetric superconducting dome for La2-xSrxCuO4 (SrD-La214), in which two characteristic temperatures and energies converge as pu increases and merge together at pu - 1.6, where Tc goes to zero. The UEPD clearly shows that pseudogap phase precedes and coexists with high temperature superconductivity in the underdoped and overdoped regimes, respectively. It is also clearly seen that the upper limit of high-Tc cuprate physics ends at a hole concentration that equals to 1.3 times the optimal doping concentration for almost all high-Tc cuprate materials, and 1.6 times the optimal doping concentration for the SrD-La214. Our analysis strongly suggests that pseudogap is a precursor of high-Tc superconductivity, the observed quantum critical point inside the superconducting dome may be related to the end point of UEPD, and the normal state of the underdoped and overdoped high temperature superconductors cannot be regarded as a conventional Fermi liquid phase.

We argue that in cuprate physics there are two types, hole content per CuO$_2$ plane ($P_{pl}$) and the corresponding hole content per unit volume ($P_{3D}$), of hole-doping concentrations for addressing physical properties that are two-dimensional (2D) and three-dimensional (3D) in nature, respectively. We find that superconducting transition temperature ($T_c$) varies systematically with $P_{3D}$ as a superconducting \textquotedblleft $dome$\textquotedblright with a universal optimal hole-doping concentration $P_{3D}^{opt.}$ = 1.6 $\times$ 10$^{21}$ cm$^{-3}$ for single-layer high temperature superconductors. We suggest that $P_{3D}^{opt.}$ determines the upper bound of the electronic energy of underdoped single-layer high-$T_c$ cuprates.

We propose that physical properties for the high temperature superconductors can be addressed by either a two-dimensional planar hole-doping concentration ($P_{pl}$) or an effective three-dimentional hole-doping concentration ($P_{3D}$). We find that superconducting transition temperature ($T_c$) exhibits a universal dome-shaped behavior in the $T_c$ $vs.$ $P_{3D}$ plot with a universal optimal doping concentration at $P_{3D}$ $\sim$ 1.6 $\times$ 10$^{21}$ cm$^{-3}$ for the single-layer high temperature superconductors.

We study superconducting transition temperature ($T_c$) of oxygen-doped double-layer high-temperature superconductors YBa$_2$Cu$_3$O$_{6+\delta}$ (0 $\le$ $\delta$ $\le$ 1) as a function of the oxygen dopant concentration ($\delta$) and planar hole-doping concentration ($P_{pl}$). We find that $T_c$, while clearly influenced by the development of the chain ordering as seen in the $T_c$ $vs.$ $\delta$ plot, lies on a universal curve originating at the critical hole concentration ($P_c$) = 1/16 in the $T_c$ $vs.$ $P_{pl}$ plot. Our analysis suggests that the universal behavior of $T_c$($P_{pl}$) can be understood in terms of the competition and collaboration of chemical-phases and electronic-phases that exist in the system. We conclude that the global superconductivity behavior of YBa$_2$Cu$_3$O$_{6+\delta}$ as a function of doping is electronically driven and dictated by pristine electronic phases at magic doping numbers that follow the hierarchical order based on $P_c$, such as 2 $\times$ $P_c$, 3 $\times$ $P_c$ and 4 $\times$ $P_c$. We find that there are at least two intrinsic electronic superconducting phases of $T_c$ = 60 K at 2 $\times$ $P_c$ = 1/8 and $T_c$ = 90 K at 3 $\times$ $P_c$ = 3/16.

We have measured thermoelectric power (TEP) as a function of hole concentration per CuO2 layer, Ppl, in Y1-xCaxBa2Cu3O6 (Ppl = x/2) with no oxygen in the Cu-O chain layer. The room-temperature TEP as a function of Ppl, S290(Ppl), of Y1-xCaxBa2Cu3O6 behaves identically to that of La2-zSrzCuO4 (Ppl = z). We argue that S290(Ppl) represents a measure of the intrinsic equilibrium electronic states of doped holes and, therefore, can be used as a common scale for the carrier concentrations of layered cuprates. We shows that the Ppl determined by this new universal scale is consistent with both hole concentration microscopically determined by NQR and the hole concentration macroscopically determined by the Cu valency. We find two characteristic scaling temperatures, TS* and TS2*, in the TEP vs. temperature curves that change systematically with doping. Based on the universal scale, we uncover a universal phase diagram in which almost all the experimentally determined pseudogap temperatures as a function of Ppl fall on two common curves; upper pseudogap temperature defined by the TS* versus Ppl curve and lower pseudogap temperature defined by the TS2* versus Ppl curve. We find that while pseudogaps are intrinsic properties of doped holes of a single CuO2 layer for all high-Tc cuprates, Tc depends on the number of layers, therefore the inter-layer coupling, in each individual system.