Normalized to: Harwin, R.
[1]
oai:arXiv.org:1805.06215 [pdf] - 1684638
Proximity effect model for x-ray Transition Edge Sensors
Submitted: 2018-05-16, last modified: 2018-05-17
Transition Edge Sensors are ultra-sensitive superconducting detectors with
applications in many areas of research, including astrophysics. The device
consists of a superconducting thin film, often with additional normal metal
features, held close to its transition temperature and connected to two
superconducting leads of a higher transition temperature. There is currently no
way to reliably assess the performance of a particular device geometry or
material composition without making and testing the device. We have developed a
proximity effect model based on the Usadel equations to predict the effects of
device geometry and material composition on sensor performance. The model is
successful in reproducing I-V curves for two devices currently under study. We
use the model to suggest the optimal size and geometry for TESs, considering
how small the devices can be made before their performance is compromised. In
the future, device modelling prior to manufacture will reduce the need for
time-consuming and expensive testing.
[2]
oai:arXiv.org:1703.10494 [pdf] - 1582253
Modelling proximity effects in Transition Edge Sensors to investigate
the influence of lateral metal structures
Submitted: 2017-03-30
The bilayers of Transition Edge Sensors (TESs) are often modified with
additional normal-metal features such as bars or dots. Previous device
measurements suggest that these features improve performance, reducing
electrical noise and altering response times. However, there is currently no
numerical model to predict and quantify these effects. Here we extend existing
techniques based on Usadel's equations to describe TESs with normal-metal
features. We show their influence on the principal TES characteristics, such as
the small-signal electrothermal parameters $\alpha$ and $\beta$ and the
superconducting transition temperature $T_{c}$. Additionally, we examine the
effects of an applied magnetic field on the device performance. Our model
predicts a decrease in $T_{c}$, $\alpha$ and $\beta$ as the number of lateral
metal structures is increased. We also obtain a relationship between the length
$L$ of a TES and its critical temperature, $T_{c} \propto L^{-0.7}$ for a
bilayer with normal-metal bars. We predict a periodic magnetic flux dependence
of $\alpha, \beta$ and $I_{c}$. Our results demonstrate good agreement with
published experimental data, which also show the reduction of $\alpha$, $\beta$
and $T_{c}$ with increasing number of bars. The observed Fraunhofer dependence
of critical current on magnetic flux is also anticipated by our model. The
success of this model in predicting the effects of additional structures
suggests that in the future numerical methods can be used to better inform the
design of TESs, prior to device processing.