The superconducting critical temperature (Tc > 15K) of niobium titanium nitride (NbTiN) thin films allows for low-loss circuits up to 1.1 THz, enabling on-chip spectroscopy and multi-pixel imaging with advanced detectors. The drive for large scale detector microchips is demanding NbTiN films with uniform properties over an increasingly larger area. This article provides an experimental comparison between two reactive d.c. sputter systems with different target sizes: a small target (100mm diameter) and a large target (127 mm x 444.5 mm). This article focuses on maximizing the Tc of the films and the accompanying I-V characteristics of the sputter plasma, and we find that both systems are capable of depositing films with Tc > 15 K. The resulting film uniformity is presented in a second manuscript in this volume. We find that these films are deposited within the transition from metallic to compound sputtering, at the point where target nitridation most strongly depends on nitrogen flow. Key in the deposition optimization is to increase the system's pumping speed and gas flows to counteract the hysteretic effects induced by the target size. Using the I-V characteristics as a guide proves to be an effective way to optimize a reactive sputter system, for it can show whether the optimal deposition regime is hysteresis-free and accessible.

Uniformity in thickness and electronic properties of superconducting niobium titanium nitride (NbTiN) thin films is a critical issue for upscaling superconducting electronics, such as microwave kinetic inductance detectors for submillimeter wave astronomy. In this article we make an experimental comparison between the uniformity of NbTiN thin films produced by two DC magnetron sputtering systems with vastly different target sizes: the Nordiko 2000 equipped with a circular 100mm diameter target, and the Evatec LLS801 with a rectangular target of 127 mm x 444.5 mm. In addition to the films deposited staticly in both systems, we have also deposited films in the LLS801 while shuttling the substrate in front of the target, with the aim of further enhancing the uniformity. Among these three setups, the LLS801 system with substrate shuttling has yielded the highest uniformity in film thickness (+/-2%), effective resistivity (decreasing by 5% from center to edge), and superconducting critical temperature (T_c = 15.0 K - 15.3 K) over a 100 mm diameter wafer. However, the shuttling appears to increase the resistivity by almost a factor of 2 compared to static deposition. Surface SEM inspections suggest that the shuttling could have induced a different mode of microstructural film growth.