We report on the development of coatings for a CCD detector optimized for use in a fixed dispersion UV spectrograph. Due to the rapidly changing index of refraction of Si, single layer broadband anti-reflection coatings are not suitable to increase quantum efficiency at all wavelengths of interest. Instead, we describe a creative solution that provides excellent performance over UV wavelengths. We describe progress in the development of a CCD detector with theoretical quantum efficiencies (QE) of greater than 60% at wavelengths from 120 to 300nm. This high efficiency may be reached by coating a backside illuminated, thinned, delta-doped CCD with a series of thin film anti-reflection coatings. The materials tested include MgF2 (optimized for highest performance from 120-150nm), SiO2 (150-180nm), Al2O3(180-240nm), MgO (200-250nm), and HfO2 (240-300nm). A variety of deposition techniques were tested and a selection of coatings which minimized reflectance on a Si test wafer were applied to live devices. We also discuss future uses and improvements, including graded and multi-layer coatings.

In this paper we present our system design and methodology for making absolute quantum efficiency (QE) measurements through the vacuum ultraviolet (VUV) and verify the system with delta-doped silicon CCDs. Delta-doped detectors provide an excellent platform to validate measurements through the VUV due to their enhanced UV response. The requirements for measuring QE through the VUV are more strenuous than measurements in the near UV and necessitate, among other things, the use of a vacuum monochromator, good dewar chamber vacuum to prevent on-chip condensation, and more stringent handling requirements.

We have used Molecular Beam Epitaxy (MBE)-based delta doping technology to demonstrate near 100% internal quantum efficiency (QE) on silicon electron-multiplied Charge Coupled Devices (EMCCDs) for single photon counting detection applications. Furthermore, we have used precision techniques for depositing antireflection (AR) coatings by employing Atomic Layer Deposition (ALD) and demonstrated over 50% external QE in the far and near-ultraviolet in megapixel arrays. We have demonstrated that other device parameters such as dark current are unchanged after these processes. In this paper, we report on these results and briefly discuss the techniques and processes employed.

We outline the challenges associated with the development and construction of large focal plane arrays for use both on the ground and in space. Using lessons learned from existing JPL-led and ASU/JPL partnership efforts to develop technology for, and design such arrays and imagers for large focal planes, we enumerate here the remaining problems that need to be solved to make such a venture viable. Technologies we consider vital for further development include: (1) architectures, processes, circuits, and readout solutions for production and integration of four-side buttable, low-cost, high-fidelity, high-performance, and high-reliability CCD and CMOS imagers; (2) modular, four-side buttable packaging of CCD/CMOS imagers; (3) techniques and hardware to test and characterize the large number of chips required to produce the hundreds of flight-grade detectors needed for large focal-plane missions being conceived at this time; (4) ground based testbed needs, such as a large format camera mounted on a ground-based telescope, to field test the detectors and the focal plane technology solutions; and (5) validation of critical sub-components of the design on a balloon mission to ensure their flight-readiness. This paper outlines the steps required to provide a mature solution to the astronomical community with a minimal investment, building on years of planning and investments already completed at JPL.