We present the novel design of microfabricated, silicon-substrate based mirrors for use in cryogenic Fabry-Perot Interferometers (FPIs) for the mid-IR to sub-mm/mm wavelength regime. One side of the silicon substrate will have a double-layer metamaterial anti-reflection coating (ARC) anisotropically etched into it and the other side will be metalized with a reflective mesh pattern. The double-layer ARC ensures a reflectance of less than 1% at the surface substrate over the FPI bandwidth. This low reflectance is required to achieve broadband capability and to mitigate contaminating resonances from the silicon surface. Two silicon substrates with their metalized surfaces facing each other and held parallel with an adjustable separation will compose the FPI. To create an FPI with nearly uniform finesse over the FPI bandwidth, we use a combination of inductive and capacitive gold meshes evaporated onto the silicon substrate. We also consider the use of niobium as a superconducting reflective mesh for long wavelengths to eliminate ohmic losses at each reflection in the resonating cavity of the FPI and thereby increase overall transmission. We develop these silicon-substrate based FPIs for use in ground (e.g. CCAT-prime), air (e.g. HIRMES), and future space-based telescopes (e.g. the Origins Space Telescope concept). Such FPIs are well suited for spectroscopic imaging with the upcoming large IR/sub-mm/mm TES bolometer detector arrays. Here we present the fabrication and performance of multi-layer, plasma-etched, silicon metamaterial ARC, as well as models of the mirrors and FPIs.

Refractive optical elements are widely used in millimeter and sub-millimeter astronomical telescopes. High resistivity silicon is an excellent material for dielectric lenses given its low loss-tangent, high thermal conductivity and high index of refraction. The high index of refraction of silicon causes a large Fresnel reflectance at the vacuum-silicon interface (up to 30%), which can be reduced with an anti-reflection (AR) coating. In this work we report techniques for efficiently AR coating silicon at sub-millimeter wavelengths using Deep Reactive Ion Etching (DRIE) and bonding the coated silicon to another silicon optic. Silicon wafers of 100 mm diameter (1 mm thick) were coated and bonded using the Silicon Direct Bonding technique at high temperature (1100 C). No glue is used in this process. Optical tests using a Fourier Transform Spectrometer (FTS) show sub-percent reflections for a single-layer DRIE AR coating designed for use at 320 microns on a single wafer. Cryogenic (10 K) measurements of a bonded pair of AR-coated wafers also reached sub-percent reflections. A prototype two-layer DRIE AR coating to reduce reflections and increase bandwidth is presented and plans for extending this approach are discussed.