Triple junction (InGaP/GaAs/Ge) and single junction (SJ) solar cells were irradiated with electrons, protons and neutrons. The degradation of remaining factors was analyzed as function of the induced Displacement Damage Dose (DDD) calculated by means of the SR-NIEL (Screened Relativistic Non Ionizing\ Energy Loss) approach. In particular, the aim of this work is to analyze the variation of the solar cells remaining factors due to neutron irradiation with respect to those previously obtained with electrons and protons. The current analysis confirms that the degradation of the $P_{max}$ electrical parameter is related by means of the usual semi-empirical expression to the displacement dose, independently of type of the incoming particle. $I_{sc}$ and $V_{oc}$ parameters were also measured as a function of the displacement damage dose. Furthermore, a DLTS analysis was carried out on diodes - with the same epitaxial structure as the middle sub-cell - irradiated with neutrons.

The investigation of the degradation effects on triple-junction (TJ) solar cells, operating in space environment, is of primary importance in view of future space missions towards harsh radiation orbits (e.g. MEO with high particle irradiation intensity) and for the new spacecraft based on electrical propulsion. In the present work, we report the experimental results obtained from the irradiation test campaign carried out both on (InGaP/GaAs/Ge) TJ solar cells and on single junction (SJ) isotype sub-cells (i.e. InGaP top cells, GaAs middle cells and Ge bottom cells). In particular, the electrical performances degradation of the irradiated samples was analyzed by means of the Displacement Damage Dose (DDD) method based on the NIEL (Non Ionizing Energy Loss) scaling hypothesis, with DDD doses computed by the SR-NIEL approach. By plotting the remaining factors as a function of the DDD, a single degradation curve for each sample type and for each electrical parameter has been found. The collapse of the remaining factors on a single curve has been achieved by selecting suitable displacement threshold energies, $E_d$, for NIEL calculation. Moreover, DLTS (Deep level Transient Spectroscopy) technique was used to better understand the nature of the defects produced by irradiation. DLTS measurements reveal a good correlation between defects introduced by irradiation inside the GaAs sub-cell and the calculated Displacement Damage Doses.

Space solar cells radiation hardness is of fundamental importance in view of the future missions towards harsh radiation environment (like e.g. missions to Jupiter) and for the new spacecraft using electrical propulsion. In this paper we report the radiation data for triple junction (TJ) solar cells and related component cells. Triple junction solar cells, InGaP top cells and GaAs middle cells degrade after electron radiation as expected. With proton irradiation, a high spread in the remaining factors was observed, especially for the TJ and bottom cells. Very surprising was the germanium bottom junction that showed very high degradation after protons whereas it is quite stable against electrons. Radiation results have been analyzed by means of the Displacement Damage Dose method and DLTS spectroscopy.